Bruckewell Technology Co., Ltd. Transistors MSB100N023

Description
100V 250A 278W 1.9mΩ@10V,40A 4V@250μA 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - MSB100N023 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 250A 278W 1.9mΩ@10V,40A 4V@250μA 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - MSB100N023 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
MSB100N023
Transistors MSB100N023
100V 250A 278W 1.9mΩ@10V,40A 4V@250μA 1 N-Channel TO-263 MOSFETs ROHS

100V 250A 278W 1.9mΩ@10V,40A 4V@250μA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MSB100N023
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 99511011 - Radwell International
Fuji Electric Corp. of America
IGBT
6MBI10S-120
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N4403RP - 854968-2N4403RP - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N4403RP
2N4403RP
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Qorvo
3.3 GHz 500W 50V MOSFET Transistor
QPD1019
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type 17.4 mm x 24 mm x 4.31 mm
View Details