The HSCH-5312 is a beam lead Schottky diode designed for mixer and detector applications in the 1-26 GHz range. It features a platinum tri-metal system and silicon nitride passivation for stable performance, with a maximum capacitance of 0.15 pF at 0 V and a maximum forward voltage of 500 mV at 1 mA. The diode has a minimum lead pull strength of 4 grams and operates from -65°C to +175°C. It is classified as a medium barrier device and is DC tested, with a maximum noise figure of 7.2 dB at 16 GHz in equivalent RF-tested variants. The part is ESD sensitive and requires careful handling.
Manufacturer: Broadcom Limited
Win Source Part Number: 873906-HSCH-5312
Features: RF Diode
Package: Bulk
Part Status: Obsolete
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 10
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.10.0060
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 873906-HSCH-5312 |
| Product Name | RFFETs - HSCH-5312 |
| Package Type | SOT3 |
