RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 Product overview: ATF-511P8-TR1 from Broadcom is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ATF-511P8-TR1 can be used for catalog matching and distributor lookup.
RF Mosfet E-pHEMT 4.5V 200mA 2GHz 14.8dB 30dBm 8-LPCC (2x2)
RF MOSFET E-PHEMT 4.5V 8LPCC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 285-ATF-511P8-TR1 | ATF-511P8-TR1-ND | ATF-511P8-TR1 |
| Product Name | N-Channel MOSFET Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3000 milliwatts |
