Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BDFN3310A056R

Description
DFN3310-10 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - BDFN3310A056R - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
DFN3310-10 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BDFN3310A056R - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BDFN3310A056R
Semiconductor Power Modules BDFN3310A056R
DFN3310-10 ESD and Surge Protection (TVS/ESD) ROHS

DFN3310-10 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BDFN3310A056R
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 1-Pack - 6th-Gen V Series Model 1MBI1600VC-120P - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 1-Pack
6th-Gen V Series Model 1MBI1600VC-120P
Specs
Technology IGBT
Package M151
Output Voltage 1200 volts
View Details
- IGCM04B60GAXKMA1 - Rochester Electronics
Infineon Technologies AG
IGCM04B60GAXKMA1
Specs
Technology Intelligent Power Module (IPM)
View Details
MOSFET Modules - - Semikron, Inc.
Semikron, Inc.
MOSFET Modules
Specs
Technology MOSFET
Configuration Half-Bridge; H-Bridge
Output Voltage 100 to 200 volts
View Details
flow PACK 1 Power Module - 10-F1126PA035M7-L827F09 - Vincotech GmbH
Vincotech GmbH
flow PACK 1 Power Module
10-F1126PA035M7-L827F09
Specs
Technology IGBT; IGBT M7
Configuration Six-Pack
Output Voltage 1200 volts
View Details