Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BDFN2C181R

Description
DFN1006 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - BDFN2C181R - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BDFN2C181R - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BDFN2C181R
Semiconductor Power Modules BDFN2C181R
DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BDFN2C181R
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

Power Driver Modules - TR10140962NOSA1 - ODG (Origin Data Global)
Infineon Technologies AG
Power Driver Modules
TR10140962NOSA1
Specs
Technology IGBT
View Details
IGBT Modules 6-Pack - 6th-Gen V Series Model 6MBI100VB-120-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 6-Pack
6th-Gen V Series Model 6MBI100VB-120-50
Specs
Technology IGBT
Configuration Six-Pack
Package M633
View Details
flow MNPC 0 Power Module - 10-FZ12NMA080SH04-M260F13 - Vincotech GmbH
Vincotech GmbH
flow MNPC 0 Power Module
10-FZ12NMA080SH04-M260F13
Specs
Technology IGBT; IGBT4 HS
Configuration Three-level MNPC (T-Type)
Output Voltage 1200 volts
View Details
MOSFET Modules - - Semikron, Inc.
Semikron, Inc.
MOSFET Modules
Specs
Technology MOSFET
Configuration Half-Bridge; H-Bridge
Output Voltage 100 to 200 volts
View Details