Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BDFN2C121V

Description
DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - BDFN2C121V - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BDFN2C121V - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BDFN2C121V
Semiconductor Power Modules BDFN2C121V
DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS

DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BDFN2C121V
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules PIM - 6th-Gen V Series Model: 7MBR15VKA120-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules PIM
6th-Gen V Series Model: 7MBR15VKA120-50
Specs
Technology IGBT
Package M726
Output Voltage 1200 volts
View Details
Semiconductor Power Modules - ESD5V0L1B-02V H6327 - ODG (Origin Data Global)
Infineon Technologies AG
Semiconductor Power Modules
ESD5V0L1B-02V H6327
Specs
Technology Rectifier
View Details
600V/Vienna Rectifier/Si Mosfet modules - MSCC60VRM45TAPG-Module - Microchip Technology, Inc.
Microchip Technology, Inc.
600V/Vienna Rectifier/Si Mosfet modules
MSCC60VRM45TAPG-Module
Specs
Technology MOSFET
Output Voltage 600 volts
Output Current 40 amps
View Details
flow PACK 1 Power Module - 10-F1126PA050M701-L828F19 - Vincotech GmbH
Vincotech GmbH
flow PACK 1 Power Module
10-F1126PA050M701-L828F19
Specs
Technology IGBT; IGBT M7
Configuration Six-Pack
Output Voltage 1200 volts
View Details