Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BDFN2C121V

Description
DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - BDFN2C121V - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BDFN2C121V - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BDFN2C121V
Semiconductor Power Modules BDFN2C121V
DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS

DFN1006-2L ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BDFN2C121V
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 2-Pack - 7th-Gen X Series Model 2MBI1800XXF120P-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 2-Pack
7th-Gen X Series Model 2MBI1800XXF120P-50
Specs
Technology IGBT
Package M272
Output Voltage 1200 volts
View Details
Power Driver Modules - IM393S6FXKLA1 - ODG (Origin Data Global)
Infineon Technologies AG
Power Driver Modules
IM393S6FXKLA1
Specs
Technology IGBT; IGBT
View Details
flow PACK 1 SiC Power Module - 10-FY086PA023MR-L222F48 - Vincotech GmbH
Vincotech GmbH
flow PACK 1 SiC Power Module
10-FY086PA023MR-L222F48
Specs
Technology SiC; SiC MOSFET
Configuration Six-Pack
Output Voltage 750 volts
View Details
- APTMC120HM17CT3AG - Microchip Technology, Inc.
Microchip Technology, Inc.
APTMC120HM17CT3AG
Specs
Technology SiC
Configuration Full Bridge
Output Voltage 1200 volts
View Details