Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BDFN2C071V45

Description
Bidirectional DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - BDFN2C071V45 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
Bidirectional DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BDFN2C071V45 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BDFN2C071V45
Semiconductor Power Modules BDFN2C071V45
Bidirectional DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS

Bidirectional DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BDFN2C071V45
Product Name Semiconductor Power Modules
Technology Rectifier
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 2-Pack - 7th-Gen X Series Model 2MBI600XNE170-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 2-Pack
7th-Gen X Series Model 2MBI600XNE170-50
Specs
Technology IGBT
Package M285
Output Voltage 1700 volts
View Details
Intelligent Power Modules (IPM) - IM523-L6A - Infineon Technologies AG
Infineon Technologies AG
Intelligent Power Modules (IPM)
IM523-L6A
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 36x21
View Details
1200V/Phase leg/SiC Mosfet modules - MSCSM120AM02CT6LIAG-Module - Microchip Technology, Inc.
Microchip Technology, Inc.
1200V/Phase leg/SiC Mosfet modules
MSCSM120AM02CT6LIAG-Module
Specs
Technology MOSFET; SiC
Output Voltage 1200 volts
Output Current 754 amps
View Details
IGBT Modules - - Semikron, Inc.
Semikron, Inc.
IGBT Modules
Specs
Technology IGBT
Configuration Half-Bridge; H-Bridge; Six-Pack
Output Voltage 600 to 3300 volts
View Details