NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN030-150P PSMN030-150P

Manufacturer: Nexperia USA Inc. Win Source Part Number: 210281-PSMN030-150P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 55.5A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 3680pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance