NXP Semiconductors Single FETs, MOSFETs PSMN009-100B,118

Description
MOSFET N-CH 100V 75A D2PAK
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Description
MOSFET N-CH 100V 75A D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - 568-PSMN009-100B,118TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-PSMN009-100B,118TR-ND
Single FETs, MOSFETs 568-PSMN009-100B,118TR-ND
MOSFET N-CH 100V 75A D2PAK

MOSFET N-CH 100V 75A D2PAK

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118 - 141723-PSMN009-100B,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118
141723-PSMN009-100B,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118 141723-PSMN009-100B,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 141723-PSMN009-100B, 118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 156nC @ 10V Max Input Capacitance: 8250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 141723-PSMN009-100B,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 156nC @ 10V
Max Input Capacitance: 8250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 568-PSMN009-100B,118TR-ND 141723-PSMN009-100B,118
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN009-100B,118
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 230000 milliwatts
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