NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN004-60B,118 PSMN004-60B,118

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 062138-PSMN004-60B,1 18 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 168nC @ 10V Max Input Capacitance: 8300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 062138-PSMN004-60B,1 18 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 168nC @ 10V Max Input Capacitance: 8300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN004-60B,118 - 062138-PSMN004-60B,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN004-60B,118
062138-PSMN004-60B,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN004-60B,118 062138-PSMN004-60B,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 062138-PSMN004-60B,1 18 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 168nC @ 10V Max Input Capacitance: 8300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 062138-PSMN004-60B,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 168nC @ 10V
Max Input Capacitance: 8300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 062138-PSMN004-60B,118
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN004-60B,118
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 230000 milliwatts
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