20 V, N-channel Trench MOSFET in a 0.98 × 1.48 × 0.35 mm WLCSP6 package with low threshold voltage, 21 mΩ maximum on-state resistance at 4.5 V gate drive, 8.7 A continuous drain current, and ESD protection exceeding 2 kV HBM. Operates with a junction temperature range of -55°C to 150°C and meets IEC 60134 absolute maximum ratings.
PMCM6501UNE - 20V, N-channel Trench MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMCM6501UNE023 |
| Polarity | N-Channel |
