NXP Semiconductors Single Bipolar Transistors PMBS3904,235

Description
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - PMBS3904,235 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Supplier's Site Datasheet
Single Bipolar Transistors - 568-PMBS3904,235TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
568-PMBS3904,235TR-ND
Single Bipolar Transistors 568-PMBS3904,235TR-ND
TRANS NPN 40V 100MA SOT23

TRANS NPN 40V 100MA SOT23

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PMBS3904,235 - 096156-PMBS3904,235 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PMBS3904,235
096156-PMBS3904,235
TRANSISTORS - Transistors (BJT) - Single - PMBS3904,235 096156-PMBS3904,235
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096156-PMBS3904,235 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236AB (SOT23) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 096156-PMBS3904,235
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics
Product Category Bipolar RF Transistors Transistors Transistors
Product Number PMBS3904,235 568-PMBS3904,235TR-ND 096156-PMBS3904,235
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PMBS3904,235
Polarity NPN NPN; NPN
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