NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP222NQ04LT PHP222NQ04LT

Description
Manufacturer: NXP Win Source Part Number: 042113-PHP222NQ04LT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 93.6nC @ 5V Max Input Capacitance: 7880pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: NXP Win Source Part Number: 042113-PHP222NQ04LT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 93.6nC @ 5V Max Input Capacitance: 7880pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP222NQ04LT - 042113-PHP222NQ04LT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP222NQ04LT
042113-PHP222NQ04LT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP222NQ04LT 042113-PHP222NQ04LT
Manufacturer: NXP Win Source Part Number: 042113-PHP222NQ04LT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 93.6nC @ 5V Max Input Capacitance: 7880pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: NXP
Win Source Part Number: 042113-PHP222NQ04LT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 93.6nC @ 5V
Max Input Capacitance: 7880pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042113-PHP222NQ04LT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP222NQ04LT
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 300000 milliwatts
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