NXP Semiconductors PHE13003A,412

Description
Power Bipolar Transistor, 1A I(C), 1-Element, NPN
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Description
Power Bipolar Transistor, 1A I(C), 1-Element, NPN
Request a Quote
Datasheet
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NPN power switching transistor for high voltage, high speed applications in compact fluorescent lamps, inverters, and electronic lighting ballasts, housed in a SOT54 (TO-92) plastic package with three leads, capable of a collector-emitter peak voltage of 700 V, continuous collector current of 1 A, and total power dissipation of 2.1 W at 25°C lead temperature, with a junction temperature rating of 150°C.

Datasheet Summary
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NPN power switching transistor for high voltage, high speed applications in compact fluorescent lamps, inverters, and electronic lighting ballasts, housed in a SOT54 (TO-92) plastic package with three leads, capable of a collector-emitter peak voltage of 700 V, continuous collector current of 1 A, and total power dissipation of 2.1 W at 25°C lead temperature, with a junction temperature rating of 150°C.

Suppliers

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Description
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 - PHE13003A,412 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 1A I(C), 1-Element, NPN

Power Bipolar Transistor, 1A I(C), 1-Element, NPN

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number PHE13003A,412
Package Type SOT54
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