NPN power transistor with an integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package, designed for high voltage switching applications such as compact fluorescent lamps and off-line power supplies. It supports a continuous collector current of 1.5 A and a peak collector-emitter voltage of 700 V, with a total power dissipation of 2.1 W at lead temperatures up to 25 °C. The device features a typical DC current gain of 17 at a collector current of 0.5 A and collector-emitter voltage of 2 V.
Power Bipolar Transistor, 1.5A I(C), 1-Element, NPN
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | PHD13003C,412 |
| Package Type | SOT54 |
