NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH3230S,115 PH3230S,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 104072-PH3230S,115 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 42nC @ 5V Max Input Capacitance: 4100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): RJK0328DPB-01#J0; PH3230S; PSMN3R2-30YLC; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 104072-PH3230S,115 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 42nC @ 5V Max Input Capacitance: 4100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): RJK0328DPB-01#J0; PH3230S; PSMN3R2-30YLC; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH3230S,115 - 104072-PH3230S,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH3230S,115
104072-PH3230S,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH3230S,115 104072-PH3230S,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 104072-PH3230S,115 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 42nC @ 5V Max Input Capacitance: 4100pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): RJK0328DPB-01#J0; PH3230S; PSMN3R2-30YLC; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 104072-PH3230S,115
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 42nC @ 5V
Max Input Capacitance: 4100pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): RJK0328DPB-01#J0; PH3230S; PSMN3R2-30YLC;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 104072-PH3230S,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH3230S,115
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 62500 milliwatts
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