NXP Semiconductors Bipolar Transistor Arrays, Pre-Biased PEMD30,115

The PEMD30 is a dual NPN and PNP resistor-equipped transistor in a SOT666 package, designed for low-current switching and IC input control. Each transistor features a built-in 2.2 kΩ bias resistor and supports a maximum collector-emitter voltage of 50 V and collector current of 100 mA. The device has a total power dissipation rating of 300 mW and a junction temperature limit of 150°C. Reflow soldering is the only recommended soldering method. The package dimensions and pinout follow the SOT666 standard.