NXP Semiconductors PBSS5240ZF

Description
Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Request a Quote
Description
Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

PNP low VCEsat (BISS) transistor in an SC-73 (SOT223) surface-mounted package, rated for 40 V collector-emitter voltage and 2 A continuous collector current, with a peak collector current of 3 A. It has a collector-emitter saturation voltage of 320 mV at -1 A and -100 mA base current, and AEC-Q101 qualification for automotive applications.

Datasheet Summary
Powered by GS/AI

PNP low VCEsat (BISS) transistor in an SC-73 (SOT223) surface-mounted package, rated for 40 V collector-emitter voltage and 2 A continuous collector current, with a peak collector current of 3 A. It has a collector-emitter saturation voltage of 320 mV at -1 A and -100 mA base current, and AEC-Q101 qualification for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
 - PBSS5240ZF - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number PBSS5240ZF
Package Type SOT223
Unlock Full Specs
to access all available technical data