NXP USA, Inc. Bipolar Transistors - BJT PBSS4360ZX

Description
Bipolar Transistors - BJT 60V 3A NPN low VCEsat transistor
Description
Bipolar Transistors - BJT 60V 3A NPN low VCEsat transistor
Datasheet
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60 V, 3 A NPN low VCEsat (BISS) transistor in an SOT223 (SC-73) surface-mounted package, rated for a peak collector current of 6 A and a total power dissipation up to 2 W under optimal thermal mounting conditions. It features a collector-emitter saturation voltage as low as 400 mV at 3 A and meets AEC-Q101 qualification for automotive applications.

Datasheet Summary
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60 V, 3 A NPN low VCEsat (BISS) transistor in an SOT223 (SC-73) surface-mounted package, rated for a peak collector current of 6 A and a total power dissipation up to 2 W under optimal thermal mounting conditions. It features a collector-emitter saturation voltage as low as 400 mV at 3 A and meets AEC-Q101 qualification for automotive applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4360ZX
Bipolar Transistors - BJT PBSS4360ZX
Bipolar Transistors - BJT 60V 3A NPN low VCEsat transistor

Bipolar Transistors - BJT 60V 3A NPN low VCEsat transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number PBSS4360ZX
Product Name Bipolar Transistors - BJT
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