NXP Semiconductors PBSS4160PAN,115

Description
Power Bipolar Transistor
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Description
Power Bipolar Transistor
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Datasheet
Datasheet Summary
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PBSS4160PAN is a dual NPN transistor in a DFN2020-6 (SOT1118) surface-mount package measuring 2 × 2 × 0.65 mm, designed for load switching and power management in battery-driven devices. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a peak collector current of 1.5 A. The transistor features a low collector-emitter saturation voltage of 185 mV at 1 A and 50 mA base current, and a saturation resistance of 240 mΩ. It is AEC-Q101 qualified for automotive applications and supports junction temperatures up to 150 °C.

Datasheet Summary
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PBSS4160PAN is a dual NPN transistor in a DFN2020-6 (SOT1118) surface-mount package measuring 2 × 2 × 0.65 mm, designed for load switching and power management in battery-driven devices. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a peak collector current of 1.5 A. The transistor features a low collector-emitter saturation voltage of 185 mV at 1 A and 50 mA base current, and a saturation resistance of 240 mΩ. It is AEC-Q101 qualified for automotive applications and supports junction temperatures up to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - PBSS4160PAN,115 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor

Power Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number PBSS4160PAN,115
Package Type SOT1118
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