NXP Semiconductors Bipolar Transistor Arrays, Pre-Biased PBLS4004V,115

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW Surface Mount SOT-666
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW Surface Mount SOT-666
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - 568-7243-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
568-7243-2-ND
Bipolar Transistor Arrays, Pre-Biased 568-7243-2-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW Surface Mount SOT-666

Buy Now Datasheet
Singapore, Singapore
Bipolar Transistor
293-PBLS4004V,115
Bipolar Transistor 293-PBLS4004V,115
TRANS NPN PREBIAS/PNP SOT666 Product overview: PBLS4004V,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PBLS4004V,115 can be used for catalog matching and distributor lookup.

TRANS NPN PREBIAS/PNP SOT666 Product overview: PBLS4004V,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PBLS4004V,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS4004V,115 - 104741-PBLS4004V,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS4004V,115
104741-PBLS4004V,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS4004V,115 104741-PBLS4004V,115
Manufacturer: NXP Win Source Part Number: 104741-PBLS4004V,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-666 Maximum Current Collector: 100mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 40V Max Vce (sat): 150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 60 @ 5mA, 5V / 150 @ 100mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 104741-PBLS4004V,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-666
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 40V
Max Vce (sat): 150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 60 @ 5mA, 5V / 150 @ 100mA, 2V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBLS4004V,115 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBLS4004V,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBLS4004V,115
TRANS NPN PREBIAS/PNP SOT666

TRANS NPN PREBIAS/PNP SOT666

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 568-7243-2-ND 293-PBLS4004V,115 104741-PBLS4004V,115 PBLS4004V,115
Product Name Bipolar Transistor Arrays, Pre-Biased Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS4004V,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 1 NPN Pre-Biased, 1 PNP
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