NXP Semiconductors RF FETs, MOSFETs MRF5S21130HR5

The MRF5S21130H series consists of N-channel enhancement-mode lateral MOSFETs designed for W-CDMA base station applications from 2110 to 2170 MHz, suitable for TDMA, CDMA, and multicarrier amplifier applications in Class AB. The devices are packaged in a NI-880 case with dimensions of 34.16 mm maximum length and 13.8 mm maximum width. Rated for a maximum drain-source voltage of 65 Vdc and a continuous drain current of up to 1200 mA at 28 V, they provide typical power gain of 13.5 dB and efficiency of 26% under 2-carrier W-CDMA conditions with 28 W average output power. The parts are RoHS compliant, feature integrated ESD protection rated to Human Body Model Class 2, Machine Model M4, and Charge Device Model C7, and are qualified for operation up to 32 Vdd. Thermal resistance from junction to case is 0.44 to 0.47 °C/W depending on operating conditions.