Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 140202-BUK9675-55A,1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 643pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9675-55A,118 | 140202-BUK9675-55A,118 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 | |
| Polarity | N-Channel | N-Channel; N-Channel |
| rDS(on) | 0.0810 ohms | |
| Package Type | SOT404 | TO-263; SOT3; D2PAK |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR |