MOSFET N-CH 55V 75A D2PAK
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 111417-BUK9606-55B,1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 258W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 7565pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 5.4 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 75A, 55V, 0.0064ohm, N-Channel, MOSFET
| DigiKey | Win Source Electronics | Rochester Electronics | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 568-BUK9606-55B,118TR-ND | 111417-BUK9606-55B,118 | BUK9606-55B,118 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9606-55B,118 | |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 55 volts | ||
| PD | 258000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |