NXP Semiconductors Single FETs, MOSFETs BUK9606-55B,118

Description
MOSFET N-CH 55V 75A D2PAK
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Description
MOSFET N-CH 55V 75A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 568-BUK9606-55B,118TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-BUK9606-55B,118TR-ND
Single FETs, MOSFETs 568-BUK9606-55B,118TR-ND
MOSFET N-CH 55V 75A D2PAK

MOSFET N-CH 55V 75A D2PAK

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 - BUK9606-55B,118 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 75A, 55V, 0.0064ohm, N-Channel, MOSFET

Power Field-Effect Transistor, 75A, 55V, 0.0064ohm, N-Channel, MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9606-55B,118 - 111417-BUK9606-55B,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9606-55B,118
111417-BUK9606-55B,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9606-55B,118 111417-BUK9606-55B,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 111417-BUK9606-55B,1 18 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 258W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 60nC @ 5V Max Input Capacitance: 7565pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 5.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 111417-BUK9606-55B,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 258W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 7565pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 5.4 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

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Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 568-BUK9606-55B,118TR-ND BUK9606-55B,118 111417-BUK9606-55B,118
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9606-55B,118
Polarity N-Channel N-Channel; N-Channel
rDS(on) 0.0064 ohms
Package Type SOT404 TO-263; SOT3; D2PAK
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR
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