NXP Semiconductors BUK954R4-40B,127

N-channel TrenchMOS logic level FET for automotive applications, housed in a TO-220AB package with a mounting base connected to the drain. It has a maximum drain-source voltage of 40 V, a continuous drain current of 75 A limited by the package, and a typical on-state resistance of 3.6 mΩ at 10 V gate-source voltage and 25°C junction temperature. The device is AEC-Q101 compliant and rated for a maximum junction temperature of 175 °C.