N-channel 40 V MOSFET designed for high-performance automotive applications, featuring a 21 mΩ maximum drain-source on-state resistance at 25 °C and a continuous drain current of 33 A at 25 °C. Packaged in an LFPAK56 (SOT669) surface-mounted case with dimensions up to 6.2 mm × 5.0 mm × 1.2 mm, it is rated for a maximum junction temperature of 175 °C and meets AEC-Q101 standards. The device supports repetitive avalanche energy up to 12 mJ and includes a true standard-level gate threshold voltage of at least 1 V at 175 °C.
Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BUK7Y21-40EX |
| Polarity | N-Channel |
