NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7226-75A,118 BUK7226-75A,118

Description
Power Field-Effect Transistor, 45A, 75V, 0.026ohm, N-Channel, MOSFET
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Description
Power Field-Effect Transistor, 45A, 75V, 0.026ohm, N-Channel, MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BUK7226-75A,118 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 45A, 75V, 0.026ohm, N-Channel, MOSFET

Power Field-Effect Transistor, 45A, 75V, 0.026ohm, N-Channel, MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7226-75A,118 - 115718-BUK7226-75A,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7226-75A,118
115718-BUK7226-75A,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7226-75A,118 115718-BUK7226-75A,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 115718-BUK7226-75A,1 18 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 158W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 45A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 2385pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 115718-BUK7226-75A,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 158W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 2385pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK7226-75A,118 115718-BUK7226-75A,118
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7226-75A,118
Polarity N-Channel N-Channel; N-Channel
rDS(on) 0.0260 ohms
Package Type SOT428 SOT3; TO-252 (DPAK); DPAK
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR
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