N-channel TrenchMOS FET for automotive applications, rated for 75 V drain-source voltage and 120 A continuous drain current, housed in a D2PAK (SOT404) package. It supports intermediate gate drive levels, operates with a maximum junction temperature of 175 °C, and meets AEC-Q101 qualification standards. The device has a typical on-state resistance of 3.4 mΩ at 25 °C and can withstand a single-pulse avalanche energy of up to 523 mJ.
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BUK663R7-75C,118 |
| Polarity | N-Channel |
