NXP Semiconductors France SAS TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSN20BKR BSN20BKR

Manufacturer: Nexperia USA Inc. Win Source Part Number: 100122-BSN20BKR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 265mA (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 0.49nC @ 4.5V Max Input Capacitance: 20.2pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited