NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH108,215 BSH108,215

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099426-BSH108,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 190pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099426-BSH108,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 190pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH108,215 - 099426-BSH108,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH108,215
099426-BSH108,215
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH108,215 099426-BSH108,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099426-BSH108,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 190pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 099426-BSH108,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 190pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23 - 17568-BSH108,215 - Utmel Electronic Limited
Hong Kong, China
BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23
17568-BSH108,215
BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23 17568-BSH108,215
BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23

BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 099426-BSH108,215 17568-BSH108,215
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH108,215 BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 830 milliwatts
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