NXP Semiconductors BCW68G215

Description
45 V, 800 mA PNP general-purpose transistor
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Description
45 V, 800 mA PNP general-purpose transistor
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Datasheet
Datasheet Summary
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The BCW68G is a PNP general-purpose transistor designed for amplifier and switching applications up to 800 mA. It is packaged in SOT-23, with a maximum collector-emitter voltage of -45 V, a collector current rating of -800 mA, and a power dissipation of 350 mW. The junction temperature range is -55°C to +150°C. The device has a DC current gain (hFE) ranging from 60 to 400, a collector-emitter saturation voltage of -1.5 V at -300 mA collector current, and a current gain-bandwidth product of 100 MHz.

Datasheet Summary
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The BCW68G is a PNP general-purpose transistor designed for amplifier and switching applications up to 800 mA. It is packaged in SOT-23, with a maximum collector-emitter voltage of -45 V, a collector current rating of -800 mA, and a power dissipation of 350 mW. The junction temperature range is -55°C to +150°C. The device has a DC current gain (hFE) ranging from 60 to 400, a collector-emitter saturation voltage of -1.5 V at -300 mA collector current, and a current gain-bandwidth product of 100 MHz.

Suppliers

Company
Product
Description
Supplier Links
 - BCW68G215 - Rochester Electronics
Newburyport, MA, United States
45 V, 800 mA PNP general-purpose transistor

45 V, 800 mA PNP general-purpose transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number BCW68G215
Polarity PNP
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