NXP Semiconductors BCP54-10TF

Description
Power Bipolar Transistor
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Description
Power Bipolar Transistor
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Datasheet
Datasheet Summary
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NPN medium power transistor in the SOT223 (SC-73) surface-mount package, rated for 45 V collector-emitter voltage and 1 A continuous collector current, with a peak collector current of 2 A. It has three current gain selections and supports up to 1.8 W total power dissipation under optimized PCB conditions. The device is AEC-Q101 qualified and operates from -55 °C to 150 °C junction temperature. Mechanically, it measures 6.7 mm × 3.7 mm × 1.7 mm (L × W × H).

Datasheet Summary
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NPN medium power transistor in the SOT223 (SC-73) surface-mount package, rated for 45 V collector-emitter voltage and 1 A continuous collector current, with a peak collector current of 2 A. It has three current gain selections and supports up to 1.8 W total power dissipation under optimized PCB conditions. The device is AEC-Q101 qualified and operates from -55 °C to 150 °C junction temperature. Mechanically, it measures 6.7 mm × 3.7 mm × 1.7 mm (L × W × H).

Suppliers

Company
Product
Description
Supplier Links
 - BCP54-10TF - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor

Power Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number BCP54-10TF
Package Type SOT223
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