NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single - BC856W,135 BC856W,135

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096125-BC856W,135 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096125-BC856W,135 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BC856W,135 - 096125-BC856W,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC856W,135
096125-BC856W,135
TRANSISTORS - Transistors (BJT) - Single - BC856W,135 096125-BC856W,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096125-BC856W,135 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 096125-BC856W,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-323-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 125 @ 2mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 096125-BC856W,135
Product Name TRANSISTORS - Transistors (BJT) - Single - BC856W,135
Polarity PNP; PNP
Unlock Full Specs
to access all available technical data

Similar Products

Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB50N65DH5 - AIKB50N65DH5 - Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-263; PG-TO263-3
Transistor Grade / Operating Range Automotive
View Details
CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND - CSD88539NDT - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SO-8
View Details
7 suppliers
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair - ALD114904SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers