NXP Semiconductors BC817-25/DG/B4,215

Description
Small Signal Bipolar Transistor, 0.5A, 45V, NPN, TO-236AB
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Description
Small Signal Bipolar Transistor, 0.5A, 45V, NPN, TO-236AB
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Datasheet
Datasheet Summary
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NPN general-purpose transistor with a 45 V collector-emitter voltage and 500 mA continuous collector current, available in SOT23 package. Current gain (hFE) ranges from 160 to 400 at IC = 100 mA and VCE = 1 V. Collector-emitter saturation voltage is up to 700 mV at IC = 500 mA and IB = 50 mA. Total power dissipation is 250 mW at ambient temperature 25 °C. Thermal resistance from junction to ambient is 500 K/W. Package is SOT23 (TO-236AB), intended for surface mount applications.

Datasheet Summary
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NPN general-purpose transistor with a 45 V collector-emitter voltage and 500 mA continuous collector current, available in SOT23 package. Current gain (hFE) ranges from 160 to 400 at IC = 100 mA and VCE = 1 V. Collector-emitter saturation voltage is up to 700 mV at IC = 500 mA and IB = 50 mA. Total power dissipation is 250 mW at ambient temperature 25 °C. Thermal resistance from junction to ambient is 500 K/W. Package is SOT23 (TO-236AB), intended for surface mount applications.

Suppliers

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Product
Description
Supplier Links
 - BC817-25/DG/B4,215 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A, 45V, NPN, TO-236AB

Small Signal Bipolar Transistor, 0.5A, 45V, NPN, TO-236AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC817-25/DG/B4,215
Polarity NPN
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