NXP Semiconductors Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs AO3414A

Description
Win Source Part Number: 1381398-AO3414A Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: UMW Package: Tape & Reel Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W (Ta) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. Mfr: NXP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Moisture Sensitivity Level (MSL): 1 (Unlimited) Standard Package: 3,000 pcs
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Description
Win Source Part Number: 1381398-AO3414A Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: UMW Package: Tape & Reel Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W (Ta) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. Mfr: NXP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Moisture Sensitivity Level (MSL): 1 (Unlimited) Standard Package: 3,000 pcs
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Datasheet
Datasheet Summary
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The AO3414A is an N-channel enhancement MOSFET designed for surface mount applications, housed in an SOT-23 package measuring 2.80 to 3.00 mm in length and 1.20 to 1.40 mm in width. It has a drain-source voltage rating of 20 V and a continuous drain current of 4.2 A at 25 °C, reducing to 3.2 A at 70 °C. The on-resistance is 26 mΩ at 4.5 V gate-source voltage and 4.2 A drain current, rising to 36 mΩ at 2.5 V and 57 mΩ at 1.8 V. The gate threshold voltage ranges from 0.4 V to 1 V, and the total gate charge is 6.2 nC at 4.5 V. Power dissipation is 1.4 W at 25 °C with a junction-to-ambient thermal resistance of 125 °C/W. The device operates from -55 °C to 150 °C junction temperature and includes an integrated body diode with a continuous current rating of 2 A.

Datasheet Summary
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The AO3414A is an N-channel enhancement MOSFET designed for surface mount applications, housed in an SOT-23 package measuring 2.80 to 3.00 mm in length and 1.20 to 1.40 mm in width. It has a drain-source voltage rating of 20 V and a continuous drain current of 4.2 A at 25 °C, reducing to 3.2 A at 70 °C. The on-resistance is 26 mΩ at 4.5 V gate-source voltage and 4.2 A drain current, rising to 36 mΩ at 2.5 V and 57 mΩ at 1.8 V. The gate threshold voltage ranges from 0.4 V to 1 V, and the total gate charge is 6.2 nC at 4.5 V. Power dissipation is 1.4 W at 25 °C with a junction-to-ambient thermal resistance of 125 °C/W. The device operates from -55 °C to 150 °C junction temperature and includes an integrated body diode with a continuous current rating of 2 A.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1381398-AO3414A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1381398-AO3414A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1381398-AO3414A
Win Source Part Number: 1381398-AO3414A Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: UMW Package: Tape & Reel Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.4W (Ta) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. Mfr: NXP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Moisture Sensitivity Level (MSL): 1 (Unlimited) Standard Package: 3,000 pcs

Win Source Part Number: 1381398-AO3414A
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: UMW
Package: Tape & Reel
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
Mfr: NXP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 3,000 pcs

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1381398-AO3414A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Polarity N-Channel
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