RF Power Field-Effect Transistor
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
RF MOSFET GAN 48V 6DFN
RF MOSFET GAN 48V 6DFN
| Rochester Electronics | Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Transistors | RF Transistors |
| Product Number | A5G26S008NT6 | A5G26S008NT6 | 568-A5G26S008NT6TR-ND | A5G26S008NT6 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | HLSON6 | Plastic SMT | 6-LDFN Exposed Pad | 6-LDFN Exposed Pad |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) | ||
| Transistor Technology / Material | GaN |
