NXP Semiconductors RF & MW Power Amplifier A3M38SL039IAAT2

Description
The A3M38SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The fieldproven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI.
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Description
The A3M38SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The fieldproven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI.
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Downers Grove, IL, United States
RF & MW Power Amplifier
A3M38SL039IAAT2
RF & MW Power Amplifier A3M38SL039IAAT2
The A3M38SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The fieldproven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI.

The A3M38SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The fieldproven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number A3M38SL039IAAT2
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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