NXP Semiconductors RF FETs, MOSFETs A2G35S200-01SR3

Description
Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V
Request a Quote Datasheet
Description
Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - A2G35S200-01SR3 - Rochester Electronics
Newburyport, MA, United States
Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V

Airfast RF Power GaN Transistor, 3400-3600 MHz, 40 W AVG., 48 V

Supplier's Site Datasheet
RF FETs, MOSFETs - 568-15206-2-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-15206-2-ND
RF FETs, MOSFETs 568-15206-2-ND
RF Mosfet GaN HEMT 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S

RF Mosfet GaN HEMT 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S

Buy Now Datasheet
RF FETs, MOSFETs - 568-15206-1-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-15206-1-ND
RF FETs, MOSFETs 568-15206-1-ND
RF Mosfet GaN HEMT 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S

RF Mosfet GaN HEMT 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - A2G35S200-01SR3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
A2G35S200-01SR3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs A2G35S200-01SR3
RF MOSFET GAN HEMT 48V NI400

RF MOSFET GAN HEMT 48V NI400

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number A2G35S200-01SR3 568-15206-2-ND A2G35S200-01SR3
Product Name RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type CFM2F NI-400S-2S Surface Mount
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