NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single - 2PA1015GR,126 2PA1015GR,126

Description
Manufacturer: NXP Win Source Part Number: 1004079-2PA1015GR,12 6 Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: NXP Win Source Part Number: 1004079-2PA1015GR,12 6 Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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TRANSISTORS - Transistors (BJT) - Single - 2PA1015GR,126 - 1004079-2PA1015GR,126 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2PA1015GR,126
1004079-2PA1015GR,126
TRANSISTORS - Transistors (BJT) - Single - 2PA1015GR,126 1004079-2PA1015GR,126
Manufacturer: NXP Win Source Part Number: 1004079-2PA1015GR,12 6 Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 1004079-2PA1015GR,126
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2PA1015GR,126-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2PA1015GR,126-ND
Single Bipolar Transistors 2PA1015GR,126-ND
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 500mW Through Hole TO-92-3

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 500mW Through Hole TO-92-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2PA1015GR,126 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2PA1015GR,126
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2PA1015GR,126
TRANS PNP 50V 0.15A TO92-3

TRANS PNP 50V 0.15A TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 1004079-2PA1015GR,126 2PA1015GR,126-ND 2PA1015GR,126
Product Name TRANSISTORS - Transistors (BJT) - Single - 2PA1015GR,126 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP
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