The MSC750SMA170B is a 1700 V, 750 mΩ silicon carbide (SiC) N-channel MOSFET in a TO-247 package, measuring 21.46 mm in length, 16.26 mm in width, and 5.31 mm in height, with a weight of 6.2 g. It supports a continuous drain current of 7.0 A at 25 °C and 5.0 A at 100 °C, with a maximum junction temperature of 175 °C. The device has a junction-to-case thermal resistance of 1.46 to 1.90 °C/W, a gate-source voltage range of -10 V to 23 V, and a total power dissipation of 79 W at 25 °C. It features low gate charge (10.1 nC typical), low input capacitance (171 pF typical), and a body diode reverse recovery time of 18 ns. The MOSFET complies with RoHS standards and has superior avalanche ruggedness with a single-pulse avalanche energy rating of 350 mJ.
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package.
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| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MSC750SMA170B |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.7500 ohms |
