Richardson RFPD RF & MW LNA MMA044AA

The MMA044AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) low-noise wideband amplifier die that operates between 6 GHz and 18 GHz. The MMA044AA die provides 21 dB of small signal gain, 1.7 dB noise figure, and output IP3 of 30 dBm, while requiring only 102 mA from a 4 V supply. The P1dB output power of 17 dBm enables the LNA to function as an LO driver for balanced, in-phase quadrature (I/Q), or image reject mixers. The MMA044AA amplifier also features RF ports that are DC blocked and internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).