MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring only 150 mA from an 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features RF I/Os that are internally matched to 50 Ohm. It is also available in die form as the MMA041AA.
MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring only 150 mA from an 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features RF I/Os that are internally matched to 50 Ohm. It is also available in die form as the MMA041AA.
