Richardson RFPD RF & MW LNA MMA040AA

Description
MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure, and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCMs).
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Description
MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure, and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCMs).
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Suppliers

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RF & MW LNA - MMA040AA - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
MMA040AA
RF & MW LNA MMA040AA
MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure, and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCMs).

MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure, and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCMs).

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MMA040AA
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 0.0 to 28000 MHz
Maximum Gain 16.5 dB
Output Power 16 dBm
Noise Figure 2 dB
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