Richardson RFPD RF and Microwave Switch MASW-011120

Description
The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.
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Description
The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MASW-011120 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW-011120
RF and Microwave Switch MASW-011120
The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.

The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. The module is designed for high power handling to be used in a 5G mMIMO, Small Cell BTS, or other TDD-based communication systems. This device incorporates PIN diode die fabricated with a low loss, high isolation switching diode process. MASW-011120 can be used in any application requiring a low-loss, high-isolation, and high-power handing SPDT.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Switches
Product Number MASW-011120
Product Name RF and Microwave Switch
Package Type HQFN
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