Richardson RFPD RF & MW Power Amplifier MAAP-015030-DIE

Description
Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.
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Description
Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.
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Suppliers

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RF & MW Power Amplifier - MAAP-015030-DIE - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MAAP-015030-DIE
RF & MW Power Amplifier MAAP-015030-DIE
Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.

Power Amplifier, 13 W, 8.5 - 11.75 GHz. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MAAP-015030-DIE
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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