Richardson RFPD RF Varactor Tuning Diode MA46H120

Description
Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitic. The MA46H120 diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
Request a Quote Datasheet
Description
Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitic. The MA46H120 diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Varactor Tuning Diode - MA46H120 - Richardson RFPD
Downers Grove, IL, United States
RF Varactor Tuning Diode
MA46H120
RF Varactor Tuning Diode MA46H120
Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitic. The MA46H120 diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

Single Diode Configuration: MACOM's MA46H120 series is a gallium arsenide flip chip hyper abrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitic. The MA46H120 diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Diodes
Product Number MA46H120
Product Name RF Varactor Tuning Diode
Configuration Single
Unlock Full Specs
to access all available technical data