Richardson RFPD RF & MW Power Amplifier HMC1022ACHIPS

The HMC1022ACHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 48 GHz. The amplifier provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 33 dBm, while requiring 150 mA from a 10 V supply on the VDD pin. Gain flatness is excellent from dc to 48 GHz at ±0.5 dB typical, making the HMC1022ACHIPS ideal for military, space, and test equipment applications. The HMC1022ACHIPS also features inputs/outputs (I/Os) that are internally matched to 50 Ohms, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via 0.075 mm × 0.025 mm (3 mil × 1 mil) ribbon bonds with a minimal length of 0.31 mm (12 mils).