Technical Features
Industry Standard 62 mm Footprint
High Humidity Operation THB-80 (HV-H3TRB)
Ultra Low Loss, High-Frequency Operation
Zero Reverse Recovery from Diodes
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
62 mm Form Factor Enables System Retrofit
Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
Applications
Induction Heating
Motor Drives
Renewables
Railway Auxiliary and Traction
EV Fast Charging
UPS and SMPS
Richardson RFPD
Done
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Description
Technical Features
Industry Standard 62 mm Footprint
High Humidity Operation THB-80 (HV-H3TRB)
Ultra Low Loss, High-Frequency Operation
Zero Reverse Recovery from Diodes
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
62 mm Form Factor Enables System Retrofit
Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
Applications
Induction Heating
Motor Drives
Renewables
Railway Auxiliary and Traction
EV Fast Charging
UPS and SMPS
Request a Quote
Email Supplier
Datasheet
Datasheet Summary Powered by GS/AI
The HAS310M17BM3 is a 1700 V, 310 A silicon carbide half-bridge module in a 62 mm industry-standard footprint. It features a copper baseplate and aluminum nitride insulator, with a case isolation voltage of 5 kV AC and a comparative tracking index of 600. The module operates with a virtual junction temperature range of -40 °C to 175 °C and has a thermal resistance of 0.092 °C/W for the MOSFET and 0.086 °C/W for the diode. It is compliant with EN45545-2 R22/23 HL3 K1 and UL 1557 certified. The device supports high-frequency operation with low switching and conduction losses, zero reverse recovery, and zero turn-off tail current. It is designed for applications including EV fast charging, railway traction, renewables, UPS, motor drives, and induction heating.
Datasheet Summary Powered by GS/AI
The HAS310M17BM3 is a 1700 V, 310 A silicon carbide half-bridge module in a 62 mm industry-standard footprint. It features a copper baseplate and aluminum nitride insulator, with a case isolation voltage of 5 kV AC and a comparative tracking index of 600. The module operates with a virtual junction temperature range of -40 °C to 175 °C and has a thermal resistance of 0.092 °C/W for the MOSFET and 0.086 °C/W for the diode. It is compliant with EN45545-2 R22/23 HL3 K1 and UL 1557 certified. The device supports high-frequency operation with low switching and conduction losses, zero reverse recovery, and zero turn-off tail current. It is designed for applications including EV fast charging, railway traction, renewables, UPS, motor drives, and induction heating.
Technical Features
Industry Standard 62 mm Footprint
High Humidity Operation THB-80 (HV-H3TRB)
Ultra Low Loss, High-Frequency Operation
Zero Reverse Recovery from Diodes
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
62 mm Form Factor Enables System Retrofit
Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
Applications
Induction Heating
Motor Drives
Renewables
Railway Auxiliary and Traction
EV Fast Charging
UPS and SMPS
Technical Features
Industry Standard 62 mm Footprint
High Humidity Operation THB-80 (HV-H3TRB)
Ultra Low Loss, High-Frequency Operation
Zero Reverse Recovery from Diodes
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
62 mm Form Factor Enables System Retrofit
Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
