Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized
, Half-Bridge Module
Technical Features
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction Optimized Third Generation SiC MOSFET Technology
Silicon Nitride Insulator and Copper Baseplate
Applications
Motor and Traction Drives
Vehicle Fast Chargers
Automotive Test Equipment
System Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.
Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module
Technical Features
- High Power Density Footprint
- High Junction Temperature (175 C) Operation
- Low Inductance (6.7 nH) Design
- Implements Conduction Optimized Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate
Applications
- Motor and Traction Drives
- Vehicle Fast Chargers
- Automotive Test Equipment
System Benefits
- Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
- Isolated integrated temperature sensing enables high-level temperature protection.
- Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.
