Richardson RFPD RF Power Transistor DU28120T

The DU28120T is an N-channel enhancement mode RF power MOSFET transistor designed for broadband operation up to 175 MHz with 120 W output power at 28 V supply. It features a DMOS structure, low capacitances, and a power dissipation rating of 269 W. The device is packaged in a case measuring 24.89 mm in length, 18.54 mm in width, and 7.49 mm in height, with a thermal resistance from junction to case of 0.65 °C/W. It complies with RoHS standards. Electrical specifications include a drain-source breakdown voltage of 65 V, gate-source voltage limit of 20 V, and drain-source current of 24 A. At 175 MHz, it delivers 60% drain efficiency and 13 dB power gain under standard test conditions.